Atomic-level investigation of surface processes governing SiGe wetting layer formation using STM/STS
نویسندگان
چکیده
OF THESIS Submitted in Partial Fulfillment of the Requirements for the Degree of Master of Science Chemical Engineering The University of New Mexico Albuquerque, New Mexico
منابع مشابه
Addimer chain structures: Metastable precursors to island formation on Ge–Si(001)-(2 · n) alloyed surface
We have identified addimer chain structures as metastable precursors to compact epitaxial islands on the (2 · n) reconstructed SiGe wetting layer, using polarity-switching scanning tunneling microscopy (STM). These chain structures are comprised of 2–12 addimers residing in the troughs of neighboring substrate dimer rows. The chain structures extend along equivalent h130i directions across the ...
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